[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"chain-detail":3,"chain-related-ch60_E11":774,"chain-scenarios-ch60_E11":782,"chain-expert-resolve-ch60_E11":784,"chain-related":821},{"id":4,"name":5,"category":6,"groupCategory":7,"intro":8,"scale":9,"maturity":10,"meta":11,"checkState":436,"version":437,"createdBy":9,"createdAt":438,"updatedAt":439,"nodes":440},"ch60_E11","LED与第三代半导体产业链","战略性新兴产业","EMERGING","碳化硅、氮化镓、LED照明、功率器件",null,"成长期",{"codes":12,"counts":14,"source":18,"experts":19,"isNew60":116,"shaanxi":117,"clusters":118,"maturity":10,"source60":126,"chainCode":13,"bottlenecks":127,"subCategory":343,"lifecycleStage":344,"key_technologies":345,"national_policies":352},[13],"E11",{"clusters":15,"segments":15,"companies":16,"bottlenecks":17},8,15,6,"全产业智慧图谱数据库（公开版）",[20,26,32,37,42,48,54,60,65,70,75,80,85,90,95,100,105,110],{"org":21,"raw":22,"name":23,"note":24,"title":25},"山东天岳先进科技股份有限公司","宗艳民（山东天岳先进科技股份有限公司），董事长，碳化硅衬底材料产业化（8英寸衬底量产与全球市占率领先）","宗艳民","碳化硅衬底材料产业化（8英寸衬底量产与全球市占率领先）","董事长",{"org":27,"raw":28,"name":29,"note":30,"title":31},"英诺赛科","骆薇薇（英诺赛科），创始人兼董事长，硅基氮化镓（GaN-on-Si）功率器件产业化领军者","骆薇薇","硅基氮化镓（GaN-on-Si）功率器件产业化领军者","创始人兼董事长",{"org":33,"name":34,"note":35,"title":36},"西安电子科技大学","郝跃","宽禁带半导体（GaN\u002FSiC材料与器件专家","",{"org":38,"raw":39,"name":40,"note":41,"title":25},"杭州士兰微电子股份有限公司","陈向东（杭州士兰微电子股份有限公司），董事长，功率半导体与化合物半导体IDM","陈向东","功率半导体与化合物半导体IDM",{"org":43,"raw":44,"name":45,"note":46,"title":47},"中国科学院苏州纳米技术与纳米仿生研究所","徐科（中国科学院苏州纳米技术与纳米仿生研究所），研究员，氮化镓单晶衬底专家（苏州纳维）","徐科","氮化镓单晶衬底专家（苏州纳维）","研究员",{"org":49,"raw":50,"name":51,"note":52,"title":53},"南昌大学","江风益（南昌大学），中国科学院院士，硅基氮化镓LED技术开拓者","江风益","硅基氮化镓LED技术开拓者","中国科学院院士",{"org":55,"raw":56,"name":57,"note":58,"title":59},"山东大学","徐现刚（山东大学），教授，碳化硅单晶与宽禁带半导体材料专家","徐现刚","碳化硅单晶与宽禁带半导体材料专家","教授",{"org":61,"raw":62,"name":63,"note":64,"title":47},"中国科学院物理研究所","陈小龙（中国科学院物理研究所），研究员，碳化硅与氮化镓晶体生长专家","陈小龙","碳化硅与氮化镓晶体生长专家",{"org":66,"raw":67,"name":68,"note":69,"title":47},"中国科学院半导体研究所","李晋闽（中国科学院半导体研究所），研究员，半导体照明与宽禁带半导体专家","李晋闽","半导体照明与宽禁带半导体专家",{"org":71,"raw":72,"name":73,"note":74,"title":53},"南京大学","张荣（南京大学），中国科学院院士，宽禁带半导体光电器件专家","张荣","宽禁带半导体光电器件专家",{"org":76,"raw":77,"name":78,"note":79,"title":59},"北京大学","沈波（北京大学），教授，氮化物半导体材料与器件专家","沈波","氮化物半导体材料与器件专家",{"org":81,"raw":82,"name":83,"note":84,"title":59},"武汉大学","刘胜（武汉大学），教授，芯片封装与可靠性专家","刘胜","芯片封装与可靠性专家",{"org":86,"raw":87,"name":88,"note":89,"title":47},"南方科技大学","刘召军（南方科技大学），研究员，Micro-LED与巨量转移技术专家","刘召军","Micro-LED与巨量转移技术专家",{"org":91,"raw":92,"name":93,"note":94,"title":59},"清华大学","罗毅（清华大学），教授，半导体光电子与集成光电子专家","罗毅","半导体光电子与集成光电子专家",{"org":66,"raw":96,"name":97,"note":98,"title":99},"陈良惠（中国科学院半导体研究所），中国工程院院士，半导体光电子专家","陈良惠","半导体光电子专家","中国工程院院士",{"org":33,"raw":101,"name":102,"note":103,"title":104},"张进成（西安电子科技大学），副校长、二级教授，GaN\u002FSiC宽禁带半导体","张进成","GaN\u002FSiC宽禁带半导体","副校长、二级教授",{"org":106,"raw":107,"name":108,"note":109,"title":59},"西安交通大学","王宏兴（西安交通大学），教授，单晶金刚石与宽禁带半导体材料设备","王宏兴","单晶金刚石与宽禁带半导体材料设备",{"org":111,"raw":112,"name":113,"note":114,"title":115},"西安赛富乐斯","陈辰（西安赛富乐斯），创始人、CEO，半极性氮化镓与Micro-LED","陈辰","半极性氮化镓与Micro-LED","创始人、CEO",true,"半导体及集成电路",[119,123],{"city":120,"name":121,"level":122},"西安","西安高新技术产业开发区","国家级",{"city":120,"name":124,"level":125},"陕西光电子先导院","省级","全产业60链图谱",[128,176,203,245,285,317],{"name":129,"risk":130,"type":9,"status":131,"experts":132,"policies":140,"progress":148,"companies":149,"policy_support":175},"8英寸SiC衬底\u002F外延","风险：高","已突破",[133,134,137],{"org":21,"raw":22,"name":23,"note":24,"title":25},{"org":55,"raw":135,"name":57,"note":136,"title":59},"徐现刚（山东大学），教授，碳化硅单晶专家","碳化硅单晶专家",{"org":33,"raw":138,"name":102,"note":9,"title":139},"张进成（西安电子科技大学），宽禁带半导体（SiC\u002FGaN）器件与集成技术","宽禁带半导体（SiC\u002FGaN）器件与集成技术",[141],{"raw":142,"date":143,"name":144,"doc_no":145,"issuer":146,"summary":147},"《关于做好2026年享受税收优惠政策的集成电路企业或项目、软件企业清单制定工作的通知》（发改高技〔2026〕487号）（国家发展改革委等，2026-04）：将线宽小于0.5微米的化合物集成电路生产企业及先进封装测试企业纳入税收优惠清单范围。","2026-04","关于做好2026年享受税收优惠政策的集成电路企业或项目、软件企业清单制定工作的通知","发改高技〔2026〕487号","国家发展改革委等","将线宽小于0.5微米的化合物集成电路生产企业及先进封装测试企业纳入税收优惠清单范围。","天科合达、天岳先进8英寸SiC研制",[150,153,156,159,161,164,166,168,170,173],{"name":151,"note":152},"天岳先进","8英寸SiC衬底量产，全球市占率领先",{"name":154,"note":155},"三安光电","重庆三安8英寸SiC衬底、湖南三安8英寸SiC",{"name":157,"note":158},"晶盛机电","8英寸SiC衬底",{"name":160,"note":158},"天科合达",{"name":162,"note":163},"同光晶体","碳化硅衬底",{"name":165,"note":163},"烁科晶体",{"name":167,"note":163},"露笑科技",{"name":169,"note":163},"东尼电子",{"name":171,"note":172},"天域半导体","碳化硅外延片",{"name":174,"note":172},"瀚天天成","第三代半导体",{"name":177,"risk":130,"type":9,"status":178,"experts":179,"policies":184,"progress":186,"companies":187,"policy_support":202},"6英寸GaN功率器件","国产替代",[180,181],{"org":27,"raw":28,"name":29,"note":30,"title":31},{"org":76,"raw":182,"name":78,"note":183,"title":59},"沈波（北京大学），教授，氮化物半导体材料专家","氮化物半导体材料专家",[185],{"raw":142,"date":143,"name":144,"doc_no":145,"issuer":146,"summary":147},"三安光电、英诺赛科GaN量产",[188,190,192,194,196,199],{"name":27,"note":189},"8英寸GaN-on-Si规模化量产",{"name":191,"note":9},"士兰微",{"name":193,"note":9},"华润微",{"name":154,"note":195},"湖南三安硅基GaN产线",{"name":197,"note":198},"晶湛半导体","氮化镓外延材料",{"name":200,"note":201},"能华微电子","硅基氮化镓功率器件","宽禁带半导体",{"name":204,"risk":130,"type":205,"status":131,"experts":206,"policies":210,"progress":211,"companies":212,"policy_support":244},"大功率Micro-LED巨量转移","工艺技术",[207],{"org":86,"raw":208,"name":88,"note":209,"title":47},"刘召军（南方科技大学），研究员，Micro-LED与巨量转移专家","Micro-LED与巨量转移专家",[],"利亚德、雷曼光电Micro-LED量产",[213,216,219,222,224,226,229,232,235,238,241],{"name":214,"note":215},"辰显光电","巨量转移良率99.995%",{"name":217,"note":218},"华灿光电","全球首条6英寸Micro-LED量产线，良率超90%",{"name":220,"note":221},"京东方","MLED",{"name":223,"note":9},"利亚德",{"name":154,"note":225},"Micro-LED外延芯片",{"name":227,"note":228},"上海显耀显示","Micro-LED微显示",{"name":230,"note":231},"国星光电","Micro-LED封装",{"name":233,"note":234},"雷曼光电","Micro-LED显示",{"name":236,"note":237},"康佳","重庆康佳光电研究院，Micro-LED",{"name":239,"note":240},"思坦科技","Micro-LED微显示芯片",{"name":242,"note":243},"赛富乐斯","西安，量子点Micro-LED芯片与模组","新型显示",{"name":246,"risk":247,"type":248,"status":249,"experts":250,"policies":251,"progress":258,"companies":259,"policy_support":9},"SiC长晶与高温离子注入等关键","风险：极高","设备","依赖进口",[],[252],{"raw":253,"date":254,"name":255,"doc_no":9,"issuer":256,"summary":257},"《电子信息制造业发展“十五五”规划》（工业和信息化部、国家发展改革委，2026-09）：部署电子信息制造业未来五年发展任务，涵盖集成电路、新型显示等重点领域。","2026-09","电子信息制造业发展“十五五”规划","工业和信息化部、国家发展改革委","部署电子信息制造业未来五年发展任务，涵盖集成电路、新型显示等重点领域。","头部衬底企业长晶炉已实现国产化配套，但高温离子注入机及部分外延、检测设备仍主要由海外厂商供应",[260,263,265,268,271,274,277,280,283],{"name":261,"note":262},"晶升股份","SiC长晶炉",{"name":157,"note":264},"SiC长晶设备",{"name":266,"note":267},"万业企业","凯世通高温离子注入机",{"name":269,"note":270},"高测股份","SiC切片设备",{"name":272,"note":273},"中科信","离子注入机",{"name":275,"note":276},"北方华创","半导体核心设备",{"name":278,"note":279},"大族激光","SiC激光切割设备",{"name":281,"note":282},"岱勒新材","金刚线",{"name":284,"note":282},"美畅股份",{"name":286,"risk":130,"type":9,"status":287,"experts":288,"policies":289,"progress":291,"companies":292,"policy_support":9},"车规级SiC MOSFET与主驱功率模块","部分突破",[],[290],{"raw":142,"date":143,"name":144,"doc_no":145,"issuer":146,"summary":147},"基本半导体、斯达半导、华润微等SiC器件与模块已在新能源汽车批量应用，但车规验证周期约3-5年，高端主驱模块市场仍以意法半导体、英飞凌等为主",[293,296,298,300,303,306,309,312,314],{"name":294,"note":295},"芯联集成","2026年上半年SiC功率模块装机量约31万套，居国内市场首位",{"name":297,"note":9},"比亚迪半导体",{"name":191,"note":299},"第四代SiC-MOSFET批量交付",{"name":301,"note":302},"晶能微","车规SiC功率模块",{"name":304,"note":305},"斯达半导","功率模块",{"name":307,"note":308},"时代电气","SiC器件与车规模块",{"name":310,"note":311},"基本半导体","车规SiC器件",{"name":313,"note":311},"瞻芯电子",{"name":315,"note":316},"闻泰科技","车规功率器件",{"name":318,"risk":130,"type":9,"status":287,"experts":319,"policies":324,"progress":326,"companies":327,"policy_support":9},"GaN射频与功率器件",[320,321],{"org":27,"raw":28,"name":29,"note":30,"title":31},{"org":33,"raw":322,"name":102,"note":323,"title":318},"张进成（西安电子科技大学），GaN射频与功率器件，全国重点实验室","全国重点实验室",[325],{"raw":142,"date":143,"name":144,"doc_no":145,"issuer":146,"summary":147},"三安光电、英诺赛科等布局GaN射频代工与GaN-on-Si功率器件，GaN功率器件在快充等领域规模应用，高端射频器件仍以海外厂商为主",[328,330,332,335,336,338,341],{"name":27,"note":329},"硅基GaN功率器件，已进入英伟达800V直流供电架构供应链",{"name":154,"note":331},"三安集成GaN射频与功率",{"name":333,"note":334},"能讯半导体","GaN射频器件",{"name":191,"note":9},{"name":193,"note":337},"GaN功率器件",{"name":339,"note":340},"中国电子科技集团公司第十三研究所","GaN射频芯片",{"name":342,"note":334},"国联万众","新一代信息技术（第三代半导体）","GROWTH",[346,347,348,349,350,351],{"risk":130,"tech":129,"type":9,"status":131,"bottleneck":116,"domestic_status":148},{"risk":130,"tech":177,"type":9,"status":178,"bottleneck":116,"domestic_status":186},{"risk":130,"tech":204,"type":205,"status":131,"bottleneck":116,"domestic_status":211},{"risk":247,"tech":246,"type":248,"status":249,"bottleneck":116,"domestic_status":258},{"risk":130,"tech":286,"type":9,"status":287,"bottleneck":116,"domestic_status":291},{"risk":130,"tech":318,"type":9,"status":287,"bottleneck":116,"domestic_status":326},[353,354,355,361,367,373,379,385,389,395,401,407,413,420,425,431],{"raw":253,"date":254,"name":255,"doc_no":9,"issuer":256,"summary":257},{"raw":142,"date":143,"name":144,"doc_no":145,"issuer":146,"summary":147},{"raw":356,"date":357,"name":358,"doc_no":9,"issuer":359,"summary":360},"《河南省新材料产业提质升级行动计划》（河南省人民政府办公厅，2025-12）：部署新材料产业提质升级，提出发展碳化硅粉体等关键电子材料。","2025-12","河南省新材料产业提质升级行动计划","河南省人民政府办公厅","部署新材料产业提质升级，提出发展碳化硅粉体等关键电子材料。",{"raw":362,"date":363,"name":364,"doc_no":9,"issuer":365,"summary":366},"《中华人民共和国国民经济和社会发展第十五个五年规划纲要》（全国人民代表大会，2026-03）：提出全链条推动关键核心技术攻关，强化产业链供应链自主可控，前瞻布局未来产业。","2026-03","中华人民共和国国民经济和社会发展第十五个五年规划纲要","全国人民代表大会","提出全链条推动关键核心技术攻关，强化产业链供应链自主可控，前瞻布局未来产业。",{"raw":368,"date":369,"name":370,"doc_no":9,"issuer":371,"summary":372},"《电子信息制造业2025—2026年稳增长行动方案》（工业和信息化部、市场监管总局，2025-08）：部署电子信息制造业稳增长重点工作，扩大有效需求、稳定产业链供应链。","2025-08","电子信息制造业2025—2026年稳增长行动方案","工业和信息化部、市场监管总局","部署电子信息制造业稳增长重点工作，扩大有效需求、稳定产业链供应链。",{"raw":374,"date":375,"name":376,"doc_no":9,"issuer":377,"summary":378},"《关于推动未来产业创新发展的实施意见》（工业和信息化部等七部门，2024-01）：布局未来材料等方向，推动先进半导体等关键战略材料发展","2024-01","关于推动未来产业创新发展的实施意见","工业和信息化部等七部门","布局未来材料等方向，推动先进半导体等关键战略材料发展",{"raw":380,"date":381,"name":382,"doc_no":9,"issuer":383,"summary":384},"《产业结构调整指导目录（2024年本）》（国家发展和改革委员会，2024-02）：宽禁带半导体材料与器件等列入鼓励类目录","2024-02","产业结构调整指导目录（2024年本）","国家发展和改革委员会","宽禁带半导体材料与器件等列入鼓励类目录",{"raw":386,"date":381,"name":387,"doc_no":9,"issuer":377,"summary":388},"《关于加快推动制造业绿色化发展的指导意见》（工业和信息化部等七部门，2024-02）：推动制造业绿色低碳转型与产业结构优化升级","关于加快推动制造业绿色化发展的指导意见","推动制造业绿色低碳转型与产业结构优化升级",{"raw":390,"date":391,"name":392,"doc_no":9,"issuer":393,"summary":394},"《推动大规模设备更新和消费品以旧换新行动方案》（国务院，2024-03）：部署重点行业设备更新，拉动电子与半导体产品升级需求","2024-03","推动大规模设备更新和消费品以旧换新行动方案","国务院","部署重点行业设备更新，拉动电子与半导体产品升级需求",{"raw":396,"date":397,"name":398,"doc_no":9,"issuer":399,"summary":400},"《关于加快经济社会发展全面绿色转型的意见》（中共中央、国务院，2024-07）：部署绿色低碳产业发展，带动功率半导体在新能源领域应用","2024-07","关于加快经济社会发展全面绿色转型的意见","中共中央、国务院","部署绿色低碳产业发展，带动功率半导体在新能源领域应用",{"raw":402,"date":403,"name":404,"doc_no":9,"issuer":405,"summary":406},"《制造业可靠性提升实施意见》（工业和信息化部等五部门，2023-06）：部署制造业可靠性提升工程，覆盖电子、汽车等重点行业","2023-06","制造业可靠性提升实施意见","工业和信息化部等五部门","部署制造业可靠性提升工程，覆盖电子、汽车等重点行业",{"raw":408,"date":409,"name":410,"doc_no":9,"issuer":411,"summary":412},"《关于促进电子产品消费的若干措施》（国家发展改革委等七部门，2023-07）：多措并举促进电子产品消费升级与产业循环","2023-07","关于促进电子产品消费的若干措施","国家发展改革委等七部门","多措并举促进电子产品消费升级与产业循环",{"raw":414,"date":415,"name":416,"doc_no":417,"issuer":418,"summary":419},"《关于建立省重点产业链“链长制”工作机制的通知》（陕办字〔2024〕20号）（陕西省委办公厅、省政府办公厅，2024）：省级重点产业链24条优化为34条，部署延链补链强链与专班推进机制","2024","关于建立省重点产业链“链长制”工作机制的通知","陕办字〔2024〕20号","陕西省委办公厅、省政府办公厅","省级重点产业链24条优化为34条，部署延链补链强链与专班推进机制",{"raw":421,"date":415,"name":422,"doc_no":9,"issuer":423,"summary":424},"《陕西省高水平推进产业创新集群建设加快形成新质生产力实施方案》（陕西省发展和改革委员会，2024）：聚焦人工智能、光子、第三代半导体等新兴产业，培育百亿级产业创新集群","陕西省高水平推进产业创新集群建设加快形成新质生产力实施方案","陕西省发展和改革委员会","聚焦人工智能、光子、第三代半导体等新兴产业，培育百亿级产业创新集群",{"raw":426,"date":427,"name":428,"doc_no":9,"issuer":429,"summary":430},"《西安市促进半导体及光子产业高质量发展实施方案》（西安市人民政府办公厅，2026-05）：重点布局第三代半导体等新赛道，实施第三代半导体抢占等五大创新工程","2026-05","西安市促进半导体及光子产业高质量发展实施方案","西安市人民政府办公厅","重点布局第三代半导体等新赛道，实施第三代半导体抢占等五大创新工程",{"raw":432,"date":143,"name":433,"doc_no":9,"issuer":434,"summary":435},"《陕西省国民经济和社会发展第十五个五年规划纲要》（陕西省人民政府，2026-04）：开展宽禁带半导体材料工艺技术与核心产品攻关，壮大西安集成电路集群","陕西省国民经济和社会发展第十五个五年规划纲要","陕西省人民政府","开展宽禁带半导体材料工艺技术与核心产品攻关，壮大西安集成电路集群","VERIFIED",1,"2026-10-11T22:08:50.411Z","2026-10-14T07:05:50.227Z",[441,486,524,567,608,653,703,735],{"id":442,"chainId":4,"layer":443,"segment":444,"name":444,"keyPoints":445,"companies":446,"sortOrder":469,"isKey":116,"checkState":436,"meta":470,"createdAt":484,"links":485},"cnH_E11_01","上游","衬底材料","蓝宝石 SiC衬底 GaN衬底",[447,449,451,453,454,455,457,458,460,463,466],{"name":151,"note":448},"SiC衬底，8英寸量产且全球市占率领先",{"name":154,"note":450},"湖南三安\u002F重庆三安，SiC衬底与外延",{"name":160,"note":452},"SiC衬底",{"name":167,"note":163},{"name":169,"note":163},{"name":162,"note":456},"碳化硅单晶衬底",{"name":165,"note":163},{"name":157,"note":459},"碳化硅长晶设备与衬底",{"name":461,"note":462},"天通股份","蓝宝石与碳化硅衬底",{"name":464,"note":465},"苏州纳维","氮化镓单晶衬底",{"name":467,"note":468},"中镓半导体","氮化镓衬底",0,{"source":18,"experts":471,"policies":477,"chainCode":13,"aggregationZones":483},[472,473,474],{"org":21,"raw":22,"name":23,"note":24,"title":25},{"org":55,"raw":135,"name":57,"note":136,"title":59},{"org":61,"raw":475,"name":63,"note":476,"title":47},"陈小龙（中国科学院物理研究所），研究员，碳化硅晶体生长专家","碳化硅晶体生长专家",[478,479,480],{"raw":142,"date":143,"name":144,"doc_no":145,"issuer":146,"summary":147},{"raw":356,"date":357,"name":358,"doc_no":9,"issuer":359,"summary":360},{"raw":481,"date":381,"name":382,"doc_no":9,"issuer":383,"summary":482},"《产业结构调整指导目录（2024年本）》（国家发展和改革委员会，2024-02）：宽禁带半导体衬底材料列入鼓励类","宽禁带半导体衬底材料列入鼓励类",[],"2026-10-12T14:28:52.788Z",[],{"id":487,"chainId":4,"layer":488,"segment":489,"name":489,"keyPoints":490,"companies":491,"sortOrder":437,"isKey":515,"checkState":436,"meta":516,"createdAt":522,"links":523},"cnH_E11_02","中游","LED外延与芯片","GaN LED外延 蓝\u002F绿\u002F红\u002FUV LED芯片",[492,493,495,498,499,502,505,508,511,513],{"name":154,"note":9},{"name":217,"note":494},"京东方旗下，Micro-LED",{"name":496,"note":497},"兆驰股份","兆驰半导体，LED外延芯片",{"name":191,"note":9},{"name":500,"note":501},"乾照光电","红黄光LED芯片",{"name":503,"note":504},"聚灿光电","LED外延芯片",{"name":506,"note":507},"蔚蓝锂芯","淮安澳洋顺昌，LED芯片",{"name":509,"note":510},"晶能光电","硅基LED芯片",{"name":512,"note":504},"兆元光电",{"name":242,"note":514},"西安，半极性氮化镓外延量产",false,{"source":18,"experts":517,"policies":518,"chainCode":13,"aggregationZones":521},[],[519,520],{"raw":253,"date":254,"name":255,"doc_no":9,"issuer":256,"summary":257},{"raw":368,"date":369,"name":370,"doc_no":9,"issuer":371,"summary":372},[],"2026-10-12T14:28:52.793Z",[],{"id":525,"chainId":4,"layer":488,"segment":526,"name":526,"keyPoints":527,"companies":528,"sortOrder":558,"isKey":515,"checkState":436,"meta":559,"createdAt":565,"links":566},"cnH_E11_03","LED封装与应用","LED封装 照明 显示背光 Mini\u002FMicro-LED",[529,531,532,533,535,538,540,542,544,547,549,552,555],{"name":214,"note":530},"TFT基Micro-LED",{"name":220,"note":221},{"name":223,"note":9},{"name":534,"note":9},"洲明科技",{"name":536,"note":537},"木林森","LED封装与照明",{"name":230,"note":539},"LED封装",{"name":541,"note":539},"鸿利智汇",{"name":543,"note":539},"瑞丰光电",{"name":545,"note":546},"艾比森","LED显示屏",{"name":233,"note":548},"Micro-LED超高清显示",{"name":550,"note":551},"奥拓电子","LED显示与智慧网点",{"name":553,"note":554},"佛山照明","LED照明",{"name":556,"note":557},"诺瓦星云","西安，LED显示控制系统龙头",2,{"source":18,"experts":560,"policies":561,"chainCode":13,"aggregationZones":562},[],[],[563],{"city":120,"name":121,"note":564,"level":122},"LED显示控制与超高清视频企业集聚","2026-10-12T14:28:52.796Z",[],{"id":568,"chainId":4,"layer":443,"segment":569,"name":569,"keyPoints":570,"companies":571,"sortOrder":585,"isKey":116,"checkState":436,"meta":586,"createdAt":606,"links":607},"cnH_E11_04","第三代半导体材料","SiC单晶 GaN-on-Si 氧化镓 金刚石",[572,573,574,576,577,578,579,580,583],{"name":151,"note":9},{"name":154,"note":9},{"name":27,"note":575},"GaN-on-Si外延与器件",{"name":160,"note":9},{"name":171,"note":172},{"name":174,"note":172},{"name":197,"note":198},{"name":581,"note":582},"中电化合物","碳化硅与氮化镓外延",{"name":242,"note":584},"西安，半极性氮化镓材料量产",3,{"source":18,"experts":587,"policies":601,"chainCode":13,"aggregationZones":603},[588,593,594,595,598],{"org":53,"raw":589,"name":590,"note":591,"title":592},"郝跃（西安电子科技大学（中国科学院院士）），宽禁带半导体（GaN\u002FSiC）材料与器件专家","郝跃（西安电子科技大学","宽禁带半导体（GaN\u002FSiC）材料与器件专家","）",{"org":43,"raw":44,"name":45,"note":46,"title":47},{"org":76,"raw":182,"name":78,"note":183,"title":59},{"org":71,"raw":596,"name":73,"note":597,"title":53},"张荣（南京大学），中国科学院院士，宽禁带半导体专家","宽禁带半导体专家",{"org":33,"raw":599,"name":102,"note":9,"title":600},"张进成（西安电子科技大学），宽禁带半导体材料与器件","宽禁带半导体材料与器件",[602],{"raw":142,"date":143,"name":144,"doc_no":145,"issuer":146,"summary":147},[604],{"city":120,"name":124,"note":605,"level":125},"省级光子产业共性技术平台，赛富乐斯等入驻","2026-10-12T14:28:52.800Z",[],{"id":609,"chainId":4,"layer":488,"segment":610,"name":610,"keyPoints":611,"companies":612,"sortOrder":643,"isKey":116,"checkState":436,"meta":644,"createdAt":651,"links":652},"cnH_E11_05","第三代半导体器件","SiC功率器件 GaN射频\u002F功率器件",[613,615,617,619,621,622,624,626,629,631,634,636,638,641],{"name":27,"note":614},"8英寸硅基GaN，累计出货超20亿颗",{"name":191,"note":616},"SiC MOSFET与模块",{"name":193,"note":618},"SiC\u002FGaN功率器件",{"name":294,"note":620},"SiC MOSFET及模组",{"name":297,"note":316},{"name":154,"note":623},"湖南三安SiC器件",{"name":315,"note":625},"安世半导体功率器件",{"name":627,"note":628},"扬杰科技","功率半导体器件",{"name":307,"note":630},"IGBT与SiC器件",{"name":632,"note":633},"新洁能","功率器件设计",{"name":310,"note":635},"SiC二极管与MOSFET",{"name":313,"note":637},"SiC器件与驱动芯片",{"name":639,"note":640},"东微半导","高压功率器件",{"name":242,"note":642},"西安，GaN基Micro-LED芯片与模组",4,{"source":18,"experts":645,"policies":648,"chainCode":13,"aggregationZones":650},[646,647],{"org":27,"raw":28,"name":29,"note":30,"title":31},{"org":38,"raw":39,"name":40,"note":41,"title":25},[649],{"raw":142,"date":143,"name":144,"doc_no":145,"issuer":146,"summary":147},[],"2026-10-12T14:28:52.806Z",[],{"id":654,"chainId":4,"layer":655,"segment":656,"name":656,"keyPoints":657,"companies":658,"sortOrder":696,"isKey":515,"checkState":436,"meta":697,"createdAt":701,"links":702},"cnH_E11_06","下游","应用场景","新能源汽车 快充 5G基站 雷达 光伏逆变",[659,662,665,668,670,673,676,679,682,685,688,690,693],{"name":660,"note":661},"比亚迪","新能源汽车主驱",{"name":663,"note":664},"阳光电源","光伏与储能逆变",{"name":666,"note":667},"华为数字能源","充电与光伏应用",{"name":307,"note":669},"轨道交通牵引变流",{"name":671,"note":672},"蔚来","SiC电驱系统",{"name":674,"note":675},"小鹏汽车","SiC平台电驱",{"name":677,"note":678},"汇川技术","新能源汽车电驱动",{"name":680,"note":681},"英飞源","充电模块，SiC应用",{"name":683,"note":684},"威迈斯","车载电源",{"name":686,"note":687},"优优绿能","充电模块",{"name":660,"note":689},"西安基地，新能源汽车",{"name":691,"note":692},"隆基绿能","西安，光伏与储能",{"name":694,"note":695},"陕汽","西安，商用车电动化",5,{"source":18,"experts":698,"policies":699,"chainCode":13,"aggregationZones":700},[],[],[],"2026-10-12T14:28:52.815Z",[],{"id":704,"chainId":4,"layer":443,"segment":705,"name":705,"keyPoints":706,"companies":707,"sortOrder":17,"isKey":116,"checkState":436,"meta":728,"createdAt":733,"links":734},"cnH_E11_07","关键设备与耗材","SiC长晶炉、外延设备及高纯粉料、石墨件等设备与耗材环节，是第三代半导体材料与器件制造的基础",[708,709,711,713,715,717,719,722,723,725,726],{"name":261,"note":262},{"name":157,"note":710},"SiC长晶设备与衬底",{"name":266,"note":712},"旗下凯世通，高温离子注入机",{"name":269,"note":714},"切片设备与金刚线",{"name":284,"note":716},"金刚线切割耗材",{"name":275,"note":718},"刻蚀与薄膜沉积设备",{"name":720,"note":721},"中微公司","MOCVD与刻蚀设备",{"name":272,"note":273},{"name":278,"note":724},"SiC晶锭激光切割设备",{"name":281,"note":282},{"name":727,"note":282},"三超新材",{"source":18,"experts":729,"policies":730,"chainCode":13,"aggregationZones":732},[],[731],{"raw":253,"date":254,"name":255,"doc_no":9,"issuer":256,"summary":257},[],"2026-10-12T14:28:52.819Z",[],{"id":736,"chainId":4,"layer":488,"segment":737,"name":737,"keyPoints":738,"companies":739,"sortOrder":765,"isKey":116,"checkState":436,"meta":766,"createdAt":772,"links":773},"cnH_E11_08","功率模块封装与陶瓷基板","车规功率模块封装、AMB陶瓷基板与散热材料环节，决定功率器件可靠性与上车应用能力",[740,742,743,744,746,748,750,753,756,759,762],{"name":294,"note":741},"SiC模组封装测试",{"name":191,"note":9},{"name":304,"note":305},{"name":297,"note":745},"车规模块封装",{"name":307,"note":747},"IGBT模块封装",{"name":749,"note":305},"宏微科技",{"name":751,"note":752},"博敏电子","AMB陶瓷基板",{"name":754,"note":755},"中瓷电子","陶瓷封装外壳",{"name":757,"note":758},"三环集团","陶瓷封装基座",{"name":760,"note":761},"富乐华","DCB\u002FAMB覆铜陶瓷基板",{"name":763,"note":764},"龙腾半导体","西安，功率器件模块封装",7,{"source":18,"experts":767,"policies":769,"chainCode":13,"aggregationZones":771},[768],{"org":81,"raw":82,"name":83,"note":84,"title":59},[770],{"raw":142,"date":143,"name":144,"doc_no":145,"issuer":146,"summary":147},[],"2026-10-12T14:28:52.825Z",[],{"chainId":4,"chainName":5,"matchedTagNames":775,"experts":776,"achievements":778,"topUniversities":780,"note":781},[],{"count":469,"items":777},[],{"count":469,"items":779},[],[],"无标签映射",{"hasMapping":515,"chainId":4,"segments":783},[],[785,787,789,791,793,795,797,799,801,803,805,807,809,811,813,815,817,819],{"name":23,"id":786},"cmv7rhp0i005ohikygnl567vb",{"name":29,"id":788},"cmv7rhp0c005jhikyc0tjwetv",{"name":34,"id":790},"21ccc399-b99a-4ab1-a0c9-bd38806b9429",{"name":40,"id":792},"4fe6aca1-5c36-4746-a0f2-b117dee91a81",{"name":45,"id":794},"cmv7rhp0o005thikyio5oay3w",{"name":51,"id":796},"cmv7rhpkf00n6hiky4okz4614",{"name":57,"id":798},"cmv7rhqlf01mlhiky13rcay1h",{"name":63,"id":800},"cmv7rhqlk01mqhiky3w24lj03",{"name":68,"id":802},"cmv7rhqlp01mvhikysh0biap2",{"name":73,"id":804},"570a889d-58d9-4a8e-b643-6c8f46af4e62",{"name":78,"id":806},"3c693995-168a-081e-4536-033ecf0b042e",{"name":83,"id":808},"e191991a-293e-42c9-addc-21041e3b49ba",{"name":88,"id":810},"cmv7rhqlt01n0hikyrru6rsl2",{"name":93,"id":812},"3d18c071-123b-408c-b3a5-b9c73d031bae",{"name":97,"id":814},"cmv7rhqlz01n5hiky5tdz4i3z",{"name":102,"id":816},"3d0e1f4c-8d3b-4d05-a140-49afa0188d08",{"name":108,"id":818},"757c7a8b-dc26-4dcc-9b8f-ee08e67e670f",{"name":113,"id":820},"bc5fbc4c-7c34-4c48-8628-03d9a1d8ad83",{"list":822,"total":865,"page":437,"pageSize":15,"totalPages":643},[823,830,836,842,849,857],{"id":824,"name":825,"category":6,"groupCategory":7,"intro":826,"scale":827,"maturity":10,"checkState":436,"nodeCount":828,"companyCount":829},"e0c81c4e-878c-4944-9633-2c202497ef16","云计算与大数据产业链","云服务、数据中心、数据处理、数据交易","中国云计算市场规模约8288亿元（信通院，2024年，同比+34.4%），其中公有云6216亿元；智能算力规模超1590 EFLOPS（工信部，2026-01）",12,163,{"id":831,"name":832,"category":6,"groupCategory":7,"intro":833,"scale":834,"maturity":10,"checkState":436,"nodeCount":15,"companyCount":835},"00ee3af3-fe37-4d60-81ef-2833c238866c","人工智能产业链","AI芯片、大模型、算法框架、AI应用","中国人工智能核心产业规模超1.2万亿元(工信部，2025)",92,{"id":837,"name":838,"category":6,"groupCategory":7,"intro":839,"scale":9,"maturity":840,"checkState":436,"nodeCount":765,"companyCount":841},"ch60_S02","人才与教育供给链","高等教育、职业教育、人才引进、技能培训","成熟期",28,{"id":843,"name":844,"category":6,"groupCategory":7,"intro":845,"scale":846,"maturity":847,"checkState":436,"nodeCount":15,"companyCount":848},"d5c035fb-13ce-442e-b94e-6ac79b0b5b85","区块链与Web3产业链","区块链底层、联盟链、数字资产、分布式应用","中国区块链市场规模IDC口径2025年超32亿美元；国内区块链信息服务备案编号累计发放20批次4223个（国家网信办《国家信息化发展报告2025》）","孕育期",44,{"id":850,"name":851,"category":6,"groupCategory":852,"intro":853,"scale":854,"maturity":855,"checkState":436,"nodeCount":16,"companyCount":856},"90644f83-8a70-4b3a-ad53-8a2b0e397d5a","卫星互联网","FUTURE","卫星互联网指以低轨星座为基础，提供宽带通信、导航增强、物联网接入等天地一体化信息服务的产业。本链聚焦卫星组网运营、地面设备与终端及行业应用；火箭与卫星制造发射的运载环节归入'商业航天'链。核心工程包括GW星座(中国星网约1.3万颗)与千帆\u002FG60星座(垣信约1.5万颗)。到2030年产业链规模有望突破1.2万亿元(券商口径)。","中国低轨卫星互联网到2030年带动产业链规模有望突破1.2万亿元(券商\u002F机构口径，2026)；2024年起两大星座进入高密度组网","TRL6-8(组网\u002F试运行)；消费终端TRL5-7",40,{"id":858,"name":859,"category":6,"groupCategory":852,"intro":860,"scale":861,"maturity":862,"checkState":436,"nodeCount":863,"companyCount":864},"9b4f4311-cda6-4461-b352-ab269ef8688b","商业航天","商业航天指以市场化方式配置资源、由商业主体提供运载火箭研制发射、卫星制造及相关服务的产业。本链聚焦民营\u002F商业运载火箭与商业卫星的研制、发射、测运控及应用；卫星组网运营与通信导航应用的终端\u002F运营部分与'卫星互联网'链交叉。2024年中国商业航天市场规模约2.3万亿元(含带动效应，口径较宽)。","中国商业航天市场规模约2.3万亿元(国家发改委专家口径\u002F中商产业研究院，2024)，预计2025年约2.8万亿元；该口径含产业链带动效应，直接航天制造发射产值远小于此","TRL6-8(火箭发射常态化)；可重复使用火箭TRL4-6；太空旅游TRL3-4",18,57,30]